Verification of Charge Transfer in Metal-Insulator-Oxide Semiconductor Diodes via Defect Engineering of Insulator

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Figure 3 from Charge Trapping Memory Characteristics of Amorphous-Indium–Gallium–Zinc Oxide Thin-Film Transistors With Defect-Engineered Alumina Dielectric

Rectification Mechanism of a P-type Oxide-based Metal–Insulator–Oxide Semiconductor–Metal Thin-Film Diode

Contact properties of a low-resistance aluminum-based electrode with metal capping layers in vertical oxide thin-film transistors - Journal of Materials Chemistry C (RSC Publishing) DOI:10.1039/D3TC02880A

Role of defects on the transparent conducting properties of binary metal oxide thin film electrodes - ScienceDirect

Vertical Transport Control of Electrical Charge Carriers in Insulator/Oxide Semiconductor Hetero-structure

High-performance oxide thin-film diode and its conduction mechanism based on ALD-assisted interface engineering - Journal of Materials Chemistry C (RSC Publishing) DOI:10.1039/D2TC03751C

Oxygen Effect on the Properties of Epitaxial (110) La0.7Sr0.3MnO3 by Defect Engineering

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Ion-gating analysis on conduction mechanisms in oxide semiconductors - ScienceDirect

Role of defects on the transparent conducting properties of binary metal oxide thin film electrodes - ScienceDirect

Verification of Charge Transfer in Metal-Insulator-Oxide Semiconductor Diodes via Defect Engineering of Insulator. - Abstract - Europe PMC

High-performance oxide thin-film diode and its conduction mechanism based on ALD-assisted interface engineering - Journal of Materials Chemistry C (RSC Publishing) DOI:10.1039/D2TC03751C

Materials, Free Full-Text

Filamentary Resistive Switching and Capacitance-Voltage Characteristics of the a-IGZO/TiO2 Memory

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